首页> 外文会议>First Topical Conference on Nanometer Scale Science and Engineering, Nov 4-9, 2001, Reno, Nevada >Photosensitive Semiconductor- Metal Nanocomposites: Preparation, Surface Characterization and Electrochemical Studies
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Photosensitive Semiconductor- Metal Nanocomposites: Preparation, Surface Characterization and Electrochemical Studies

机译:光敏半导体-金属纳米复合材料:制备,表面表征和电化学研究

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Metal deposited semiconductor nanoparticles can alter the selectivity of chemical reactions, enhance their rates and decrease charge recombination under UV illumination. The present work outlines the preparation of titanium dioxide semiconductor films using the sol gel process and the preparation of metal nanoparticles, in an organic medium, using a phase transfer catalyst. The metal nanoparticles are deposited on thin, transparent TiO_2 films prepared on glass substrates. Controlled metal deposition is achieved by an electrophoretic approach. Microscopic studies of the surface topography using AFM and SEM shows that the nanoporous films to be composed of ~ 20-30 nm sized particles with islands of metal deposits. Photoelectrochemical measurements of the TiO_2/metal film composites show order of magnitude increase in photocurrent and photovoltage during UV illumination. Cyclic voltametry studies show weak peaks at +0.48V and 0.38V that suggest the occurrence of a redox couple whose nature has not been ascertained yet.
机译:金属沉积的半导体纳米粒子可以改变化学反应的选择性,提高其速率并减少在紫外线照射下的电荷复合。本工作概述了使用溶胶凝胶法制备二氧化钛半导体薄膜和使用相转移催化剂在有机介质中制备金属纳米粒子。金属纳米粒子沉积在玻璃基板上制备的透明TiO_2薄膜上。通过电泳方法可实现受控的金属沉积。使用AFM和SEM对表面形貌进行的显微镜研究表明,纳米多孔膜由约20-30 nm大小的颗粒组成,带有金属沉积岛。 TiO_2 /金属膜复合材料的光电化学测量结果表明,在紫外线照射下,光电流和光电压的数量级增加。循环伏安法研究显示+ 0.48V和0.38V处的弱峰表明存在尚未确定其性质的氧化还原对。

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