Temperature Dependence of the Photoluminescence Intensity in Si_(3+x)N_4:H Films with Amorphous Si Nanoclusters: Evidence for Two Processes Involved in the Nonradiative Relaxation of Photoexcitations

摘要

Photoluminescent properties of silicon nitride films with amorphous Si nanoclusters attract considerable attention since these properties have relevance to potential applications of such films in Si-based optoelectronic devices. Many important points here, however, still remain poorly understood issues, including the very origin of the photoluminescence (PL) and the mechanisms underlying the relaxation of optically generated excitations in such films.