首页> 外文会议>Fifteenth International Symposium on Chemical Vapor Deposition, May 14-18, 2000, Toronto, Ontario >QUASI-THERMODYNAMIC MODELS OF SURFACE CHEMISTRY: APPLICATION TO MOVPE OF III-V TERNARY COMPOUNDS
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QUASI-THERMODYNAMIC MODELS OF SURFACE CHEMISTRY: APPLICATION TO MOVPE OF III-V TERNARY COMPOUNDS

机译:表面化学的准热力学模型:在III-V三元化合物运动中的应用

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摘要

A quasi-thermodynamic approach is applied to analyze surface processes in MOVPE of ternary III-V compounds. A new mechanism of competitive arsenic and phosphorus incorporation into GaAsP, AlAsP and InAsP is suggested based on the assumption that low sticking probability of P_4 and AsP_3 is responsible for suppression of phosphorus incorporation. This kinetic effect competes with a natural thermodynamic trend of increasing arsenic content in the row AlAsP →?> GaAsP → InAsP. A good agreement is achieved between the computational results and experimental observations supporting the model assumptions.
机译:准热力学方法用于分析三元III-V化合物在MOVPE中的表面过程。基于P_4和AsP_3的低粘附概率可抑制磷的掺入这一假设,提出了一种竞争性砷和磷掺入GaAsP,AlAsP和InAsP的新机理。这种动力学效应与增加行中砷含量的自然热力学趋势相抗衡,而砷的行列为AlAsP→→GaAsP→InAsP。计算结果与支持模型假设的实验观察结果之间取得了很好的一致性。

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