ATOMIC LAYER DEPOSITION OF HIGH-k OXIDES

摘要

The self-limiting film growth mechanism in atomic layer deposition (ALD) ensures excellent film conformality and uniformity over large areas, and atomic level composition and thickness control. A variety of dielectric oxides have been deposited by ALD. In this paper, ALD deposition and electrical characterization of two groups of high-k oxides will be examined: (ⅰ) SrTiO_3 and BaTiO_3, and (ⅱ) Ta_2O_5 and Nb_2O_5 based solid solutions and nanolaminates.