首页> 外文会议>Ferroelectric Thin Films XI >Field Induced Dielectric Properties of 0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3 Thin Films

【24h】

Field Induced Dielectric Properties of 0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3 Thin Films

机译：0.7Pb（Mg_（1/3）Nb_（2/3））O_3-0.3PbTiO_3薄膜的场致介电性能

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

DC electric field induced dielectric properties of 0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3 (PMN-PT) thin films were studied as a function of frequency at different temperatures. It was observed that the dielectric constant (ε) and dissipation factor (tanδ) were decreased in presence of bias field. The temperature of dielectric maxima was found to increase with increasing bias level. The low temperature (

机译：研究了直流电场诱导的0.7Pb（Mg_（1/3）Nb_（2/3））O_3-0.3PbTiO_3（PMN-PT）薄膜的介电特性随频率在不同温度下的变化。观察到，在存在偏置场的情况下，介电常数（ε）和耗散因数（tanδ）降低。发现电介质最大值的温度随偏置水平的增加而增加。直流偏压的施加抑制了介电常数的低温（

著录项

来源
《Ferroelectric Thin Films XI》|2002年|p.379-384|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Apurba Laha; S. Saha; S. B. Krupanidhi;
展开▼
作者单位

Materials Research Centre, Indian Institute of Science, Bangalore -560 012, INDIA;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类物理学;
关键词
入库时间 2022-08-26 14:19:59

相似文献

外文文献
中文文献
专利

1. Ferroelectric and dielectric properties of La_(0.6)Sr_(0.4)CoO_3-buffered 0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3 thin film by pulsed laser deposition [J] . Qirong Yao, Feifei Wang, Chung Ming Leung Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2014,第Null期

机译：脉冲激光沉积La_（0.6）Sr_（0.4）CoO_3缓冲的0.7Pb（Mg_（1/3）Nb_（2/3））O_3-0.3PbTiO_3薄膜的铁电和介电性能
2. Nanoscale study by piezoresponse force microscopy of relaxor 0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3 and 0.9Pb(Mg_(1/3)Nb_(2/3))O_3-0.1PbTiO_3 thin films grown on platinum and LaNiO_3 electrodes [J] . M. Detalle, rnA. Ferri, rnA. Da Costa, Thin Solid Films . 2010,第16期

机译：弛豫器0.7Pb（Mg_（1/3）Nb_（2/3））O_3-0.3PbTiO_3和0.9Pb（Mg_（1 / 3Nb_（2/3））O_3-0.1PbTiO_3的压电响应力显微镜纳米研究在铂和LaNiO_3电极上生长的薄膜
3. Local Piezoelectric Hysteresis Loops for the Study of Electrical Properties of 0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3 Thin Films: Bottom Electrode Dependence and Film Thickness Effect [J] . A. FERRI, A. DA COSTA, S. SAITZEK Ferroelectrics . 2008,第0期

机译：0.7Pb（Mg_（1/3）Nb_（2/3））O_3-0.3PbTiO_3薄膜电学特性的局部压电磁滞回线：下电极依赖性和膜厚效应
4. Field Induced Dielectric Properties of 0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3 Thin Films [C] . Apurba Laha, S. Saha, S. B. Krupanidhi, Materials Research Society Symposium . 2003

机译：场诱导介电性能为0.7pb（Mg_（1/3）Nb_（2/3））O_3-0.3PBTIO_3薄膜
5. Thin film dielectric properties characterization by scanning near-field microwave microscopy [D] . Huang, Shuogang 2009

机译：通过扫描近场微波显微镜表征薄膜介电性能
6. Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET [O] . Yuhua Xiong, Xiaoqiang Chen, Feng Wei, 2016

机译：超薄Hf-Ti-O高k栅介电薄膜的电学特性及其在ETSOI MOSFET中的应用
7. Field-induced dielectric properties of laser ablated antiferroelectric $(Pb_0_._9_9Nb_0_._0_2)(Zr_0_._5_7Sn_0_._3_8Ti_0_._0_5)_0_._9_8O_3$ thin films [O] . Bharadwaja SSN, Krupanidhi SB 2000

机译：激光烧蚀反铁电$（Pb_0 _._ 9_9Nb_0 _._ 0_2）（Zr_0 _._ 5_7Sn_0 _._ 3_8Ti_0 _._ 0_5）_0 _._ 9_8O_3 $薄膜的场致介电特性

Field Induced Dielectric Properties of 0.7Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3 Thin Films

摘要

著录项

相似文献

相关主题

期刊订阅