INDHI: HIGHLIGHTS OF AN INDUSTRIALLY ORIENTED PROJECT

摘要

This paper reports the most significant results obtained in the mainframe of the three years INDHI project. Aim of the project was to transfer lab-scale high efficiency cell results, such as screen printed selective emitters, plasma remote passivation, Rapid Thermal Processes, grooved buried contacts, module effective ARC, new cell interconnections, etc. into a real industrial environment, by developing a mc-Si, large area cells, industrial fabrication process. Efficiency numbers of 17% were expected, more than three absolute points respect to existing industrial production, and one absolute point respect to the state of the art. Several batches of cells were fabricated on 260 μm thick, 103×103 mm~2 large mc-Si wafers, and the high efficiency procedures developed by partners were directly checked at the EniTecnologie production line. Efficiency values of 16% were obtained on cells with acidic texturing and SiN_x passivating layer, and screen printed buried contact, selective emitter cells demonstrated average efficiencies of 16.2%. Modules with 17% cell efficiency were fabricated.