INDUSTRIAL SCREEN PRINTED n-TYPE SILICON SOLAR CELLS WITH FRONT BORON EMITTER AND EFFICIENCIES EXCEEDING 17

摘要

In this article we present large area solar cells on n-type silicon. The emitter of the solar cells is formed by a boron doped layer at the front side of the solar cells and was established by tube furnace BBr_3-diffusion. A transparent phosphorous doped back surface field leads to a bifacial structure of the solar cells. With respect to the higher thermal sensitivity of mc-Si all relevant process steps were optimized at moderate temperatures leading to solar cells with efficiencies of 14.7% on mc-Si, 15.9% on FZ-Si and 17.1% on Cz-Si substrates. As a result of the bifacial topology new features of the solar cells arise and a significant increase of the power output can be reported. Based on these solar cells an innovative way of module interconnection is possible, discussed in a separate paper at this conference by Kopecek et al. [1].