NEGATIVE CHARGES IN THE PSEUDO-BINARY AL_2O_3/TIO_2 SYSTEM

摘要

Pseudo-binary (Al_2O_3)_x(TiO_2)_(1-x) alloys, deposited by spin coating and subsequently annealed at high temperatures are suitable for surface passivation of p-type Si. The layers expose negative charges densities in the order -5 ×10~(11) to -1 × 10~(12) cm~(-2) We have studied the influence of spinning and annealing conditions on the amount of negative charges present in the layers. We also found that there is no direct correlation between the amount of negative charges and the attainable surface recombination velocity, indicating that interface effects play a non-negligible role here. It was also found that the negative charges in the layer are not affected by a firing process.