首页> 外文会议>European Microwave Conference vol.2; 20041011-14; Amsterdam(NL) >Measurement of Nonlinear Dispersive Parameters of Avalanche Photodiode Using Pulsed RF Signal and Quasi-DC Optical Stimulus
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Measurement of Nonlinear Dispersive Parameters of Avalanche Photodiode Using Pulsed RF Signal and Quasi-DC Optical Stimulus

机译:利用脉冲RF信号和准DC光刺激测量雪崩光电二极管的非线性色散参数

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In this work we report on a measurement system using pulsed RF signal and extracted results of nonlinear parameters of large signal dispersive model of avalanche photodiode. Nonlinear model of the avalanche photodiode (Si, SSO-AD-230, Silicon Sensor GmbH, Germany) was considered as two-port network and vector reflection measurement was carried out using Microwave Transition Analyzer (HP 70820A) in pulsed RF mode. Square wave optical stimulus of 5 μs width (FWHM) and 5 kHz PRF (quasi-DC) were synchronized with the pulsed RF excitation using a synchronization circuit. Nonlinear parameters of large signal model of the avalanche photodiode were extracted from the small signal vector reflection measurement at different bias point and optical conditions. Thermal impedance of the device limits the CW measurement up to 0.1 mW of optical power, whereas using present method it was possible to characterize the device up to 1.3 mW of peak optical power.
机译:在这项工作中,我们报告了一个使用脉冲RF信号的测量系统,并提取了雪崩光电二极管大信号色散模型的非线性参数的结果。雪崩光电二极管(Si,SSO-AD-230,德国Silicon Sensor GmbH,德国)的非线性模型被认为是两端口网络,并且使用微波跃迁分析仪(HP 70820A)以脉冲RF模式进行矢量反射测量。使用同步电路,将5μs宽度(FWHM)和5 kHz PRF(准DC)的方波光激励与脉冲RF激励进行同步。从不同偏置点和光学条件下的小信号矢量反射测量中提取了雪崩光电二极管大信号模型的非线性参数。器件的热阻抗将CW测量限制在光功率的0.1 mW之内,而使用本方法,则有可能表征高达1.3 mW的峰值光功率的器件。

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