首页> 外文会议>European Microwave Conference; 20060910-15; Manchester(GB) >Very High Tunable Inter-Digital Capacitor Embedded Fully into BZN Thin Film Dielectrics for Microwave Applications
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Very High Tunable Inter-Digital Capacitor Embedded Fully into BZN Thin Film Dielectrics for Microwave Applications

机译:完全可嵌入到BZN薄膜电介质中的极高可调数字间电容器,用于微波应用

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摘要

In this paper, a tunable inter-digital capacitor (IDC) using the bismuth zinc niobate (BZN) pyrochlore thin film dielectrics is presented for microwave applications. In order to reduce the DC bias voltage and to increase the tunability of the IDC, its electrodes are fully embedded into the tunable BZN dielectrics. At 20 V DC applied, the IDC yields 75 % tunability at 5.8 GHz. This tunability is the highest at microwave frequencies, as far as authors know.
机译:本文针对微波应用提出了一种使用铌酸铋锌(BZN)烧绿石薄膜电介质的可调数字指间电容器(IDC)。为了降低DC偏置电压并提高IDC的可调谐性,其电极完全嵌入可调谐BZN电介质中。在施加20 V DC电压时,IDC在5.8 GHz频率下可产生75%的可调性。据作者所知,这种可调谐性在微波频率下最高。

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