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Thermoelectric Properties of Er-doped InGaN Alloys for High Temperature Applications

机译:掺Er的InGaN合金在高温下的热电性能

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摘要

Thermoelectric (TE) properties of erbium-silicon co-doped In_xGa_(1-x)N alloys (In_xGa_(1-x)N: Er + Si, 0
机译:通过金属有机化学气相沉积法生长的-硅共掺杂In_xGa_(1-x)N合金(In_xGa_(1-x)N:Er + Si,0

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  • 来源
  • 会议地点 San Francisco CA(US);San Francisco CA(US)
  • 作者单位

    Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX,79409;

    Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX,79409;

    Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX,79409;

    Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX,79409;

    Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX,79409;

    Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX,79409;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 能源;工程材料一般性问题;
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