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Solar grade silicon materials and poly-silicon solar cell

机译:太阳能级硅材料和多晶硅太阳能电池

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In this paper, we should analyze the characteristic of the solar grade poly-silicon up-graded by physical process and make comparison with silicon made by Siemens process in wafer and solar cell, also we make a analysis for the degradation of the solar cell module. From the result we find that the silicon block have no obvious drawback such as crack detected by GT infrared and the average minority carrier lifetime is 3.86μs, the minority lifetime and resistivity of the wafer is better than the standard, solar cell prepared using the solar grade silicon wafer by physical process has an average conversion efficiency of 15.78% which is 0.12% higher than the Siemens wafer mainly due to high open circuit voltage. Efficiency degradation of the solar cell made by physical process is less than 3% after half an year which met the international standard. So we come to the conclusion that solar grade silicon prepared by physical process is a promising alternative material for PV industry and become main solar grade poly-silicon in the future.
机译:在本文中,我们应该分析通过物理工艺升级的太阳能级多晶硅的特性,并与西门子工艺在晶片和太阳能电池中制造的硅进行比较,并对太阳能电池组件的退化进行分析。 。从结果可以发现,硅块没有明显的缺陷,如通过GT红外检测到的裂纹,平均少数载流子寿命为3.86μs,晶片的少数寿命和电阻率均优于使用太阳能电池制备的标准太阳能电池。物理工艺生产的高等级硅晶片的平均转换效率为15.78%,比西门子晶片高0.12%,这主要是由于高开路电压所致。半年后达到国际标准的物理过程导致的太阳能电池效率下降不到3%。因此,我们得出的结论是,通过物理工艺制备的太阳能级硅是光伏工业的有希望的替代材料,并成为未来的主要太阳能级多晶硅。

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