A Simple Compact Model to Analyze the Impact of Ballistic and Quasi-Ballistic Transport on Ring Oscillator Performance

摘要

In this work, a compact model for DGMOS taking into account ballistic and quasi-ballistic transport has been proposed and implemented in Verilog-A environment. Short channel effects and model continuity (via the introduction of an interpolation function to link the above and the subthreshold voltage) have been included to obtain a complete description of the drain current. The dynamical mean free path definition was considered to describe scattering processes with impurities and phonons. Finally, the model has been used to simulate two different small-circuits (CMOS inverter and ring oscillators) and show the significant impact of ballistic/quasi-ballistic transport on the commutation of CMOS inverter and oscillation frequency of ring oscillator. Our simulation results prove that the ballistic transport improves the commutation and the static performances of the CMOS inverter, and increases the oscillation frequency of ring oscillators. This work demonstrates the feasibility of a simulation study of ballistic/quasi-ballistic transport at circuit level and highlights the direct relation between the type of transport and static or transient performances of small-circuits.