Pulse Electrodeposited ZnSeTe Films

摘要

ZnSe_xTe_(1-x) films were deposited by pulse electrodeposition technique for the first time. The films exhibited cubic structure, with lattice parameter increasing from 0.579 to 0.605 ran as the Te content increased. Band gap values in the range of 2.35 eV - 2.69 eV are observed as the ZnSe concentration increased. Refractive index was found to vary from 2.83 - 2.53 with increase of'x' value. Raman spectra exhibit the ZnSe like LO phonons. Photoluminescence spectra of ZnSe_(1-x)Te_x films with different tellurium content confirms that the Te isovalent impurities exactly replace the Se atoms whose electronic configurations are the same.