DEVELOPMENT OF HIGH SPEED 850 nm VCSELS FOR OC-192 APPLICATION

摘要

In this paper, high performance 850nm InGaAsP/InGaP strain-compensated vertical-cavity surface-emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25℃ to 85℃. In addition, we design the single transverse mode operation of low threshold current (Ith) of 1.5 mA, slope efficiencies about 0.35 W/A, high optical output power of 3.8 mW and speed performance of 10Gb/s VCSELs under continuous-wave operation by employing oxygen implantation, MOCVD re-growth and selective oxidation.