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GROWTH OF SnO_2 THIN FILMS BY ALD AND CVD: A COMPARATIVE STUDY

机译:ALD和CVD法生长SnO_2薄膜的比较研究

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摘要

Thin films of SnO_2 have successfully been deposited by both ALD and CVD using the SnI_4-O_2 precursor combination. Depositions were carried out in the temperature region of 350-750℃ on α-Al_2O_3(0 1 2) substrates. In both cases the films were found to grow as the tetragonal SnO_2 phase (cassiterite), poly-crystalline on Si(100) and epitaxial on α-Al_2O_3(012) substrates with the in-plane orientation relationships [010]_(SnO_2)‖[100]_(α-Al_2O_3) and [101]_(SnO_2)‖[121]_(α-Al_2O_3). Furthermore, no iodine contamination could be detected in any of the deposited films. The results from the two deposition techniques will be compared.
机译:使用SnI_4-O_2前驱体组合,已经通过ALD和CVD成功沉积了SnO_2薄膜。在350-750℃的温度区域内在α-Al_2O_3(0 1 2)衬底上进行沉积。在这两种情况下,都发现薄膜以四方晶SnO_2相(锡石)生长,在Si(100)上呈多晶,在α-Al_2O_3(012)衬底上以面内取向关系[010] _(SnO_2)外延生长。 ” [100] _(α-Al_2O_3)和[101] _(SnO_2)” [121] _(α-Al_2O_3)。此外,在任何沉积膜中均未检测到碘污染。将比较两种沉积技术的结果。

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