Electrochemical and Photo-Electrochemical Properties of Porous n-InP Layers

摘要

In this paper, we investigate the properties of porous structures anodically grown onto n-InP (100) in 1 M HC1. The relation between growth parameters and the pore morphology is firstly reported. In situ electrochemical characterizations show that the pore formation strongly influences the physical properties of n-InP surfaces. Capacitance measurements reveal a modification of the electronic distribution but no variation of the flat band potential. Photocurrent spectra performed during the pore growth are strongly modified: uniform increase of the photocurrent followed by a decrease with narrowing of the spectrum is observed, red shift. Finally ex situ photoluminescence experiments carried out onto porous films show both a quantum size effect and a "dead" layer behavior.