Latest developments in AlGalnN laser diode technology for defence applications.

摘要

The latest developments in AlGalnN laser diode technology are reviewed for defence applications such as underwater telecommunications, sensor systems, datacom etc. The AlGalnN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v. to the visible, i.e., 380-530nm, by tuning the indium content of the laser GalnN quantum well. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of >100mW in the 400-420nm wavelength range. Low defectivity and highly uniform TopGaN and Ammono GaN-substrates allow arrays and bars of nitride lasers to be fabricated. In addition, high power operation of AlGalnN laser diodes is demonstrated with the operation of a single chip, 'mini-array' consisting of a 3 stripe common p-contact at powers up to 2.5W cw in the 408-412 nm wavelength range and a 16 stripe common p-contact laser array at powers over 4W cw.