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A New Approach to Fabricate Vertically Stacked Single-Crystalline Silicon Nanowires

机译：制造垂直堆叠的单晶硅纳米线的新方法

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A new method to fabricate vertically stacked single-crystal silicon nano-wires (SiNW) has been developed and presented in this work. This process combines an Inductive Coupled Plasma (ICP) Dry Etch with subsequent Bosch cycle treatment followed by a one-s

机译：在这项工作中，已经开发出了一种制造垂直堆叠的单晶硅纳米线（SiNW）的新方法。此过程将感应耦合等离子体（ICP）干蚀刻与随后的Bosch循环处理结合在一起

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《Electron Devices and Solid- State Circuits, 2007 IEEE Conference on 》|2007年|P.133-136|共4页
会议地点 TainanTaiwan
作者
Ng; R.M.Y.; Tao Wang; Mansun Chan;
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nanowires; sputter etching; core size evolution; elliptical eccentricity; inductive coupled plasma dry etch; self-limiting thermal oxidation; stress effect; subsequent Bosch cycle treatment; vertically stacked single-crystalline silicon nanowires;

机译：纳米线;溅射蚀刻核心尺寸演变；椭圆偏心电感耦合等离子体干法刻蚀；自限热氧化压力效应随后的博世循环治疗；垂直堆叠的单晶硅纳米线;

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专利

1. Vertically Stacked Silicon Nanowire Transistors Fabricated by Inductive Plasma Etching and Stress-Limited Oxidation [J] . Ng R.M.Y., Tao Wang, Feng Liu, Electron Device Letters, IEEE . 2009 ,第5期

机译：电感等离子体刻蚀和应力限制氧化制备的垂直堆叠硅纳米线晶体管
2. Fabrication of vertically stacked single-crystalline Si nanowires using self-limiting oxidation [J] . Wang T., Yu B., Liu Y., Nanotechnology . 2012 ,第1期

机译：利用自限氧化法制备垂直堆叠的单晶硅纳米线
3. A novel approach to silicon-nanowire-assisted growth of high-purity, single-crystalline beta-Si3N4 nanowires [J] . Niu JJ, Wang JN Chemical vapor deposition: CVD . 2007 ,第8期

机译：硅纳米线辅助的高纯度单晶β-Si3N4纳米线生长的新方法
4. A New Approach to Fabricate Vertically Stacked Single-Crystalline Silicon Nanowires [C] . Ng R.M.Y., Tao Wang, Mansun Chan IEEE Conference on ELectron Devices and Solid-State Circuits . 2007

机译：一种制造垂直堆叠单晶硅纳米线的新方法
5. Ballistic electron emission microscopy and internal photoemission study on metal bi-layer/oxide/silicon, high-k oxide/silicon, and "end-on" metal contacts to vertical silicon nanowires. [D] . Cai, Wei. 2010

机译：金属双层/氧化物/硅，高k氧化物/硅以及垂直硅纳米线的“端对端”金属触点的弹道电子发射显微镜和内部光发射研究。
6. Fabrication characterization and kinetic study of vertical single-crystalline CuO nanowires on Si substrates [O] . Shao-Liang Cheng, Ming-Feng Chen 2012

机译：Si衬底上垂直单晶CuO纳米线的制备表征和动力学研究
7. A Novel Top-Down Fabrication Process for Vertically-Stacked Silicon-Nanowire Array [O] . Kangil Kim, Jae Keun Lee, Seung Ju Han, 2020

机译：用于垂直堆叠硅纳米线阵列的新型自上而下的制造工艺

A New Approach to Fabricate Vertically Stacked Single-Crystalline Silicon Nanowires

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