首页> 外文会议>Eco-Materials Processing and Design VIII; Materials Science Forum; vols.544-545 >Preparation of Si-B-C System Powder Using Silicon, Boron, and Boron Carbide
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Preparation of Si-B-C System Powder Using Silicon, Boron, and Boron Carbide

机译:用硅,硼和碳化硼制备Si-B-C体系粉末

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Boron carbide composites in Si-B-C System have been widely studied and applied in excellent engineering materials. These materials are usually used at high temperature. Unfortunately, amorphous Si-B-C ceramics have been few reports regarding the properties of Si-B-B_4C ceramics. In this study, the preparation of crystallized Si-B-C system compounds using Si, B, and B_4C powders was investigated to determine their potentially for applications as high hardness composites. The samples were prepared at 1673 K for 2 hours in Ar atmosphere. The sintered bodies were cut into 5 x 5 x 10 mm blocks and polished with diamond disk for Vickers hardness. The samples were subjected to X-ray diffraction (XRD) analysis for phase evolution using a powder X-ray diffractometer. The fracture surfaces of the specimens were observed using a scanning electron microscope (SEM) included an energy dispersive X-ray fluorescence spectrometer (EDX) system to estimate the microstructures.
机译:Si-B-C体系中的碳化硼复合材料已得到广泛研究,并应用于优良的工程材料中。这些材料通常在高温下使用。不幸的是,关于Si-B-B_4C陶瓷的性能,无定形Si-B-C陶瓷很少有报道。在这项研究中,研究了使用Si,B和B_4C粉末制备结晶的Si-B-C系统化合物的可能性,以确定它们潜在地可作为高硬度复合材料应用。样品在Ar气氛中于1673 K下制备2小时。将烧结体切成5×5×10mm的块,并用金刚石盘抛光以达到维氏硬度。使用粉末X射线衍射仪对样品进行X射线衍射(XRD)分析以进行相演化。使用包括能量色散X射线荧光光谱仪(EDX)系统的扫描电子显微镜(SEM)观察样品的断裂表面,以估计微观结构。

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