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Application-specific integrated processing for ULSI

机译:ULSI的专用集成处理

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Abstract: ULSI device manufacturing requires capital equipmentmanufacturers to deliver state-of-the-art performance,particle- free process environments, and high uptime.With critical dimensions of 0.5 $mu and below,essentially perfect etching results are required tomeet device requirements. Gate structures, once simplepoly-si types, are now multiple films of poly-si plussilicide. Contact hole etching to silicon requiresdamage free and polymer free surfaces following etch.Metallizations, once single aluminum alloy films, arenow complex refractory metal/aluminum/refractory metalsandwiches. Multiple etch steps are required tosuccessfully process these layers. Drytek hasmanufactured integrated process equipment for the pastsix years. To meet the demand for ULSI, Drytek hasdeveloped the ASIQ$+TM$/, or Application SpecificIntegrated Quad. Our paper discusses the benefits ofthe ASIQ$+TM$/ system concept for complex etchapplications, where the use of different plasma sourceson the same integrated process platform is required fornear perfect etching results of ULSI devices.!14
机译:摘要:超大规模集成电路器件的制造需要资本设备制造商提供最先进的性能,无颗粒的工艺环境和较高的正常运行时间。0.5μμ及以下的临界尺寸要求基本完美的蚀刻结果才能满足器件要求。栅极结构,曾经是简单的多晶硅类型,现在是多晶硅多晶硅和硅化物的多层薄膜。对硅的接触孔蚀刻需要在蚀刻后无损伤和无聚合物的表面。金属化,一旦是单铝合金膜,现在是复杂的难熔金属/铝/难熔金属三明治。为了成功地处理这些层,需要多个蚀刻步骤。在过去的六年中,Drytek制造了集成处理设备。为了满足对ULSI的需求,Drytek开发了ASIQ $ + TM $ /或“ Application Specific Integrated Integrated Quad”。我们的文章讨论了ASIQ $ + TM $ /系统概念对复杂蚀刻应用的好处,在这种情况下,要使ULSI器件获得完美的蚀刻效果,必须在同一集成工艺平台上使用不同的等离子体源!14

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