Department of Light Sources and Illuminating Engineering, Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Fudan University, #220 Handan Road, Shanghai 200433, China;
Department of Light Sources and Illuminating Engineering, Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Fudan University, #220 Handan Road, Shanghai 200433, China;
Department of Light Sources and Illuminating Engineering, Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Fudan University, #220 Handan Road, Shanghai 200433, China;
Department of Light Sources and Illuminating Engineering, Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Fudan University, #220 Handan Road, Shanghai 200433, China;
LED; reliability; lifetime; junction temperature; ideal factor;
机译:基于n型GaN肖特基二极管的热电子发射模型的串联电阻,理想因子和势垒高度与温度的关系的起源。
机译:关于LED效率对交界地理想因子的依赖性评论
机译:低理想因子和低反向电流的NH_3分子束外延生长在Ga面GaN上的p-n结
机译:在N型GaN肖特基势垒二极管上的氧化Ni / Au和Ni透明导电氧化物(TCOS)的参数提取,具有偏置依赖阻挡高度和不同温度的理想因子
机译:AlGaN / GaN异质结场效应晶体管的性能和可靠性建模。
机译:超高压电子束蒸发制备的Pt / GaN肖特基二极管电学特性与温度的关系
机译:肖特基结电流-电压特性的非理想温度依赖性的可能物理起源