TEL Technology Center America, 255 Fuller Rd., Suite 244, Albany, NY 12203, USA;
TEL Technology Center America, 255 Fuller Rd., Suite 244, Albany, NY 12203, USA;
TEL Technology Center America, 255 Fuller Rd., Suite 244, Albany, NY 12203, USA;
College of Nanoscale Science and Engineering, 257 Fuller Rd., Albany, NY 12203, USA;
College of Nanoscale Science and Engineering, 257 Fuller Rd., Albany, NY 12203, USA;
TEL Technology Center America, 255 Fuller Rd., Suite 244, Albany, NY 12203, USA;
College of Nanoscale Science and Engineering, 257 Fuller Rd., Albany, NY 12203, USA;
TEL Technology Center America, 255 Fuller Rd., Suite 244, Albany, NY 12203, USA;
College of Nanoscale Science and Engineering, 257 Fuller Rd., Albany, NY 12203, USA;
机译:通过循环沉积和退火方案沉积的Hf_(1-x)Zr_xO_2栅电介质的多技术x射线和晶体相,组织结构以及电子结构的光学表征
机译:Ge和Si衬底在循环原子层沉积-退火Hf_(1-x)Zr_xO_2 / Al_2O_3薄膜叠层中高k四方相形成和界面性质中的作用
机译:通过循环沉积和退火方案沉积的Hf1-xZrxO2栅电介质的原子层的多技术X射线和晶体相,织构和电子结构的光学表征
机译:使用循环沉积和退火方案的ALD HF_XZR_(1-X)O_2的纹理和四边形相位稳定
机译:加速人工时效引起的四方相向单斜相转变以及稳定氧化锆中微观结构的影响。
机译:(1-x)BaZr0.2Ti0.8O3-xBa0.7Ca0.3TiO3体系四方正交相界处大压电的机理
机译:原子层沉积法生长的掺铁氧化锆中四方相/立方相的稳定性。
机译:通过离子束辅助沉积沉积双轴织构的氧化钇稳定的氧化锆。