Statistical Low-Frequency Noise Model for MOSFETs under Large Signal Cyclo-Stationary Excitation

摘要

Experimental investigation and statistical modeling of the low-frequency noise behavior of MOSFETs under cyclo-stationary excitation was performed. The developed modeling approach is based on discrete device physics quantities, which are shown to cause statistical variability in LF noise behavior. It allows the derivation of an analytical formulation for the noise behavior. Monte Carlo simulations were also performed. Good agreement between experimental data, Monte Carlo simulations and model is found.