Important role of dielectrics in bringing second electronic revolution in the twenty first century

摘要

Dielectrics as gate dielectrics, interlevel dielectrics and passivating layers etc. have played a very important role in the devlopment of various semiconductor technologies including complimentary metal-oxide-Si (CMOS) technology. CMOS chips are the workhorse of modern microelectronics and are supposed to dominate the electronics in at least first quarter of the 21~(st) century. In place of conventional silicon based inorganic dielectrics, we will need dielectrics with value of K less than that of SiO_2 (low K dielectrics) and also dielectrics with value of K more than that of Si_3N_4 (high K dielectrics) for the development of sub 100 nm CMOS technology. The processing of conventional (Si based dielectrics) as well as low and high K dielectrics will be carried out by processing techniques that can accommodate the manufacturing needs of, small feature size devices fabricated on large diameter wafers and result in lower defects. In this paper, we have summarized the contributions that we have made to meet the demands of current and semiconductor manufacturing.