Systematic studies on transition layers of carbides between CVD diamond films and substrates of strong carbide-forming elements

摘要

Abstract: The nucleation and growth mechanism of polycrystalline diamond films prepared by chemical vapor deposition (CVD) have received increasing research interest. To verify the existence of the transition layers between CVD diamond films and substrates, and to investigate their composition, structure and properties are very meaningful research topics for understanding the mechanism of diamond film growth and developing the applications of CVD diamond films. In this work, the transition layers of carbides for the substrates of molybdenum (Mo), silicon (Si), tungsten (W), tantalum (Ta), and niobium (Nb) and titanium (Ti) have been systematically studied by x-ray diffraction characterization. The experiment results have provided evidence of the existence of transition layers and have revealed that the transition layers are polycrystalline Mo$-2$/C, SiC, WC and W$-2$/C, TaC and Ta$-2$/C, NbC and Nb$-2$/C, as well as TiC for the substrates of Mo, Si, W, Ta, Nb and Ti, respectively.!6