Spatial distribution of luminescence in CdTe wafers

机译：CdTe晶片中发光的空间分布

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摘要

The nature of the 1.4eV band in CdTe is studied by cathodoluminescence. Results indicate that the band is not related only to surface defects.

机译：通过阴极发光研究了CdTe中1.4eV带的性质。结果表明该带不仅与表面缺陷有关。

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来源
《Defect recognition and image processing in semiconductors and devices》|1993年|177-180|共4页
会议地点 Santander(ES);Santander(ES)
作者
U.Pal; P.Fernandez; J.Piqueras; M.D.Serrano; E.Dieguez;
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作者单位

Depto. Fisica de Materiales, Fac. Fisicas, U.Complutense,28040 Madrid, Spain;

Depto. Fisica de Materiales, Fac. Fisicas, U.Complutense,28040 Madrid, Spain;

Depto. Fisica de Materiales, Fac. Fisicas, U.Complutense,28040 Madrid, Spain;

Depto. Fisica de Materiales, U.Autonoma, Cantoblanco-Madrid, Spain;

Depto. Fisica de Materiales, U.Autonoma, Cantoblanco-Madrid, Spain;

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原文格式 PDF
正文语种 eng
中图分类硅酸盐工业;无机质材料;
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2. Composition and thickness distribution of HgCdTe molecular beam epitaxy wafers by infrared microscope mapping [J] . Chang Y, Badano G, Jiang E, Journal of Crystal Growth . 2005,第1a4期

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3. Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers [J] . Hieu T. Nguyen, Mallory A. Jensen, Li Li, Photovoltaics, IEEE Journal of . 2017,第3期

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4. Spatial distribution of luminescence in CdTe wafers [C] . International conference on Defect recognition and image processing in semiconductors and devices . 1994

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5. Spatial Distribution of Environmental Dose for Luminescence Dosimetry: Theoretical Estimation and Applications [D] . Chauhan, Naveen. 2011

机译：发光剂量剂量的环境剂量的空间分布：理论估计和应用
6. Investigation of diffusion length distribution on polycrystalline silicon wafers viaphotoluminescence methods [O] . Shishu Lou, Huishi Zhu, Shaoxu Hu, -1

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7. Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence [O] . Méndez Martí Bianchi, Piqueras de Noriega Javier, Dominguez-Adame Acosta F., 1988

机译：GaAs缺陷的空间分布：阴极发光研究的Te晶片

Spatial distribution of luminescence in CdTe wafers

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