Macroscopic and microscopic characterization of residual strains in LEC-grown III-V compound wafers

摘要

Macroscopic and microscopic characterizations of residual strains in commercial LEC-grown III-V compound wafers, mainly in GaP wafers, with standard dimensions have been made by measuring strain-induced birefringence. The macroscopic characterization was made in a series of wafers systematically sliced from a crystal ingot to investigate the distribution of residual strains in the whole crystal ingot, relating to thermal stresses during crystal growth, while the microscopic characterization was made with a high spatial resolution to investigate the local distribution of residual strains, relating to crystal defects.