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The Influence of the Semiconducting Properties of Passive Films on Localized Corrosion Rates

机译:钝化膜的半导体特性对局部腐蚀速率的影响

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A passive film with a high electrical resistance can lead to a small cathodic current and repassivation of metastable pits and crevices. Many passive films behave as semiconductors and cathodic current magnitudes can be related to the semiconducting properties of the films. In this study, Alloy C22 was investigated with Mott-Schottky (MS) tests in neutral and acidic solutions. The passive film forming on Alloy C22 was found to be n-type with measured charge carrier densities and flatband potentials that were frequency dependent. An expression developed by Brug et al.(1) was found to calculate flatband potentials consistent with polarization scans. Using this expression the charge carrier density was calculated to be 10~(21) cm~(-3) and the flatband potential was found to be pH dependent, but close to the hydrogen redox couple. Alloy's C22's low flatband potential may increase its resistance to stable localized corrosion in ambient environments.
机译:具有高电阻的无源薄膜会导致较小的阴极电流,并使亚稳态凹坑和缝隙重新钝化。许多无源薄膜的行为就像半导体一样,阴极电流的大小可能与薄膜的半导体特性有关。在这项研究中,对C22合金进行了中性和酸性溶液的Mott-Schottky(MS)测试。发现在合金C22上形成的钝化膜为n型,其测得的电荷载流子密度和平坦带电势与频率有关。发现由Brug等人(1)开发的表达式可以计算与极化扫描一致的平带电势。使用该表达式,电荷载流子密度经计算为10〜(21)cm〜(-3),并且发现平带电势与pH有关,但接近氢氧化还原对。合金C22的低平坦带电势可能会提高其对周围环境中稳定的局部腐蚀的抵抗力。

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