首页> 外文会议>Consumer Electronics, Communications and Networks (CECNet), 2012 2nd International Conference on >A 3–14GHz ultra-wideband low-noise amplifier in 0.13μm CMOS using double-channel and global noise-cancellation
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A 3–14GHz ultra-wideband low-noise amplifier in 0.13μm CMOS using double-channel and global noise-cancellation

机译:采用双通道和全局噪声消除功能的,0.13μmCMOS的3–14GHz超宽带低噪声放大器

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摘要

A 1.2V 3–14GHz ultra-wideband (UWB) CMOS low noise amplifier (LNA) is reported. By the utilization of double channel topology the input matching, flat gain as well as low noise is achieved simultaneously. The LNA obtains the maximum S21 of 14.2dB in band. Maximum gain rippling is only 0.1dB across the desired broadband. IIP3 of −3dBm at 8GHz is obtained. The I/O reflection coefficient are both better than −10.2dB. The noise figure (NF) falls from 3.72dB to 1.46dB with frequency monotonically, and the power dissipation is merely 10.5mW.
机译:报告了一个1.2V 3–14GHz超宽带(UWB)CMOS低噪声放大器(LNA)。通过利用双通道拓扑结构,可以同时实现输入匹配,平坦增益和低噪声。 LNA在频段内获得的最大S21为14.2dB。在所需的宽带范围内,最大增益纹波仅为0.1dB。在8GHz下获得了-3dBm的IIP3。 I / O反射系数均优于-10.2dB。噪声系数(NF)随频率单调从3.72dB下降到1.46dB,功耗仅为10.5mW。

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