【24h】

Adventures in High-Temperature Resistive Emitter Physics

机译:高温电阻射极物理的历险

获取原文
获取原文并翻译 | 示例

摘要

The next generation of resistively heated emitter pixels is expected to attain apparent temperatures more than a factor of two higher than presently achievable - in excess of 2000 K. The peak temperatures for the current generation of devices are determined by the balance between the power input to the pixel and the conductive loss of heat through the leg structures. At pixel temperatures higher than approximately 1500-2000 K, radiative losses will begin to dominate over conductive losses. We explore the physics of this regime and find that the peak temperature is determined primarily by the power input, emissivity and emitting area. The speed of radiatively limited pixels is also examined and found to be considerably more complicated than that of conductively limited pixels since both loss terms play significant roles in the pixel's dynamic behavior. In order to attain the higher temperatures required, development work will be required on two fronts: materials science and advanced, higher power drive circuitry. Some of the critical issues related to these tasks are discussed.
机译:预计下一代电阻加热的发射器像素的视在温度将比目前可达到的温度高出两倍以上(超过2000 K)。当前一代设备的峰值温度由输入到输出功率之间的平衡确定。像素和通过腿部结构的热量传导损失。在像素温度高于大约1500-2000 K的情况下,辐射损耗将开始超过导电损耗。我们探索了这种状态的物理原理,发现峰值温度主要由功率输入,发射率和发射面积决定。还检查了受辐射限制的像素的速度,发现它比受传导限制的像素的速度要复杂得多,因为这两个损耗项在像素的动态行为中起着重要作用。为了达到所需的更高温度,将需要在两个方面进行开发工作:材料科学和先进的,更高功率的驱动电路。讨论了与这些任务有关的一些关键问题。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号