Low-temperature processing of PZT thin films by 2.45 GHz microwave heating

摘要

The effect of microwave heating with a frequency of 2.45 GHz on the low-temperature crystallization of Pb(Zr_xTi_(1-x))O_3 (PZT) films was investigated. PZT thin films were coated on Pt/Ti/SiO_2/Si substrates by the sol-gel method and then crystallized by single-mode 2.45 GHz microwave irradiation in the magnetic field. The elevated temperature generated by microwave heating used to obtain the perovskite phase was only 450℃, which is significantly lower than that of conventional thermal processing. The PZT films crystallized by microwave heating at 450℃ showed similar ferroelectric properties to those of the films crystallized by conventional thermal processing at 600℃. The average remanent polarization and coercive field of the PZT films are approximately 21 μC/cm~2 and 90 kV/cm, respectively. It is clear that single-mode microwave irradiation in the magnetic field is effective for obtaining perovskite PZT thin films at low temperatures.