Electrical properties in hexagonal InN thin films

摘要

In this paper, we study the electrical properties (both dc and ac) in hexagonal InN thin films grown on GaAs substrates by rf magnetron sputtering. From the temperature-dependent conductance, it is found that the carrier transport properties of InN thin films are governed by holes trapped at the grain boundaries. The observed negative capacitance effect is attributed to the carrier capture and emission at the InN/GaAs interface states, by aid of a comparative study on an InN thin film grown on sapphire substrate.