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Fast Extraction of Static Electric Parameters with Accuracy Control

机译:通过精度控制快速提取静电参数

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摘要

The paper presents an efficient numerical method to extract accurate R, L, C parameters of passive on-chip structures. This method is based on two main original ideas. First, the accuracy is controlled by using two complementary approaches based on scalar and vector potential, which provide lower and upper bounds for the extracted parameter. The convergence is accelerated by using the Richardson extrapolation of the average value of the two complementary bounds. Second, the field equations are solved by multigrid finite element method with local adaptive mesh subgriding. The refining process is stopped as soon as the desired accuracy is reached.
机译:本文提出了一种有效的数值方法来提取无源片上结构的准确R,L,C参数。此方法基于两个主要的原始思想。首先,通过使用基于标量和矢量电势的两种互补方法来控制精度,这两种方法为提取的参数提供了上下限。通过使用两个互补范围的平均值的Richardson外推法,可以加快收敛速度​​。其次,通过局部网格自适应网格划分的多网格有限元方法求解场方程。一旦达到所需的精度,就会停止精炼过程。

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