Dilute nitride-based III-V heterostructures for unhindered carrier transport in quantum-confined p-i-n solar cells

摘要

Successions of dilute nitride-based III-V semiconductor staircase like superlattice structures are incorporated in the intrinsic region of common III-V p-i-n solar cells. The choices of material system and energy band design are tuned towards facilitating the collection of all photo-generated carriers while minimizing recombination losses. Band structure calculations including strain effects, band anti-crossing models and transfer matrix methods are used to theoretically demonstrate optimum conditions for enhanced vertical transport. High electron quantum tunneling escape probability, together with a free movement of quasi-3 D holes, is predicted here to result in enhanced PV device performance. Furthermore, the increase in electron effective mass due to the incorporation of N translates in enhanced absorptive properties, ideal for PV application.