首页> 外文会议>Conference on Photon Processing in Microelectronics and Photonics; 20080121-24; San Jose,CA(US) >Mid-IR photoluminescence and lasing of Chromium doped II-VI Quantum Dots
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Mid-IR photoluminescence and lasing of Chromium doped II-VI Quantum Dots

机译:铬掺杂的II-VI量子点的中红外光致发光和激光发射

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摘要

Here we report a new method for transition-metal (TM) doped II-VI Quantum Dots (QD) fabrication and first mid-IR (2-3 μm) lasing at 77K of Cr~(2+):ZnS QD powder (~ 27 nm grain size). Cr~(2+):ZnS nanocrystalline dots (NCDs) were prepared using laser ablation. The mid-IR photoluminescence (PL) and lasing were studied. The dependence of PL spectrum profile on pump energy demonstrated a threshold behavior accompanied by the appearance of a sharp stimulated emission band around 2230 nm. The stimulated emission band is shifted to the longer wavelength with respect to the spontaneous emission and corresponds to the peak of the Cr:ZnS gain spectrum. This was also accompanied by a considerable lifetime shortening.
机译:在这里,我们报告了一种新的方法,用于过渡金属(TM)掺杂的II-VI量子点(QD)制备和在Cr〜(2 +):ZnS QD粉末中以77K的首次中红外(2-3μm)激光激射(〜 27纳米晶粒尺寸)。利用激光烧蚀制备了Cr〜(2 +):ZnS纳米晶点(NCD)。研究了中红外光致发光(PL)和激光发射。 PL光谱曲线对泵浦能量的依赖性显示出阈值行为,并伴有在2230 nm附近出现明显的受激发射带。相对于自发发射,受激发射带移动到更长的波长,并且对应于Cr:ZnS增益谱的峰值。这还伴随着寿命的显着缩短。

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