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Mask RD Activities at the Advanced Mask Technology Center

机译:先进口罩技术中心的口罩研发活动

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摘要

The Advanced Mask Technology Center (AMTC) in Dresden is an equally-owned joint venture of Advanced Micro Devices Inc. (AMD), DuPont Photomasks, Inc. (DPI), and Infineon Technologies AG (Infineon) founded in 2002 to create a world-leading mask R&D center for both DRAM and logic applications. The AMTC's primary focus is research and development of sub-70 nm technologies. While 193 nm lithography will be used for 65 nm design rules and is probable for 45 nm design rules, solutions for sub-45 nm design rules are still being studied. Possible solutions include 193 nm immersion, 157 nm immersion, EUV, and EPL or its variants. The AMTC is actively involved in multiple collaborative projects to develop masks for advanced lithographies. This paper presents a sampling of AMTC's development activities on both conventional and EUV masks. Intensive studies on adequate materials and their properties for the respective technology have been performed with key partners in the field. Masks have been produced and analyzed. New repair processes have been developed for the small structures of future nodes, the printing capabilities have been predicted by AIMS measurements and analyzed with printing experiments at the respective wavelengths. In this talk we will present the latest results of simulations, experiments, handling and tool qualifications performed at the AMTC or with its partners. We will especially focus on our activities for the EUV technology and will present results on material and process development as well as on simulations for soft and hard pellicle induced distortions. For the EUV technology we will present preliminary results from our etching experiment on binary masks. First results on the performance of our new nano-machining RAVE tool will be shown.
机译:德累斯顿高级掩模技术中心(AMTC)是由Advanced Micro Devices Inc.(AMD),DuPont Photomasks,Inc.(DPI)和Infineon Technologies AG(Infineon)于2002年成立的一家合资公司,旨在创造一个世界领先的掩模研发中心,用于DRAM和逻辑应用。 AMTC的主要重点是70纳米以下技术的研发。虽然193 nm光刻技术将用于65 nm设计规则,并且可能适用于45 nm设计规则,但仍在研究低于45 nm设计规则的解决方案。可能的解决方案包括193 nm浸入,157 nm浸入,EUV和EPL或其变体。 AMTC积极参与多个合作项目,以开发用于高级光刻的掩模。本文介绍了AMTC在传统和EUV口罩上的开发活动。已与该领域的主要合作伙伴就各种技术的适当材料及其性能进行了深入研究。口罩已经生产和分析。已经为未来节点的小结构开发了新的修复过程,通过AIMS测量预测了打印能力,并通过相应波长的打印实验对其进行了分析。在本次演讲中,我们将介绍在AMTC或其合作伙伴处进行的仿真,实验,处理和工具鉴定的最新结果。我们将特别关注我们在EUV技术方面的活动,并将在材料和工艺开发以及软硬膜薄膜引起的扭曲的仿真方面呈现结果。对于EUV技术,我们将展示我们在二元掩模上进行的蚀刻实验的初步结果。将展示我们新型纳米加工RAVE工具性能的初步结果。

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