首页> 外文会议>Conference on Optical Fiber and Planar Waveguide Technology Nov 13-15, 2001, Beijing, China >An Investigation on Photodamage of Zn:In:LiNbO_3 Crystal Waveguide Substrate
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An Investigation on Photodamage of Zn:In:LiNbO_3 Crystal Waveguide Substrate

机译:Zn:In:LiNbO_3晶体波导基板的光损伤研究

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In this research, Czochralski method was used to grow Zn:In:LiNbO_3 crystal. The lattice constants, ultra-visible absorption spectra, infrared absorption spectra and photodamage resistance ability of the crystal were measured. The photodamage threshold of LiNbO_3 and Zn:In:LiNbO_3 crystal wave-guide substrate were investigated by the m-line method. It is found that the higher the concentrations of In and Zn were doped, the more the absorption band of crystal was shifted to short wave. The OH absorption peak of Zn(3mol%):In(2mol%):LiNbO_3 and Zn(3mol%):In(lmol%):LiNbO_3 crystal was located at about 3484cm~(-1), and that of Zn(3mol%):In(3mol%): LiNbO_3 crystal was located at about 3515cm~(-1). The photodamage resistance ability of Zn(3mol%):In(2mol%): LiNbO_3 crystal was two orders of magnitude higher than that of LiNbO_3 crystal. The photodamage threshold of LiNbO_3 crystal waveguide substrate and Zn:In:LiNbO_3 crystal wave-guide substrate were 5x 10~3J/cm~2 and 1 x 10~6J/cm~2, respectively.
机译:在这项研究中,Czochralski方法用于生长Zn:In:LiNbO_3晶体。测量了晶体的晶格常数,超可见吸收光谱,红外吸收光谱和抗光损伤能力。用m线法研究了LiNbO_3和Zn:In:LiNbO_3晶体波导衬底的光损伤阈值。发现掺杂的In和Zn的浓度越高,晶体的吸收带向短波移动的越多。 Zn(3mol%):In(2mol%):LiNbO_3和Zn(3mol%):In(lmol%):LiNbO_3晶体的OH吸收峰位于3484cm〜(-1)处,而Zn(3mol %):In(3mol%):LiNbO_3晶体位于约3515cm〜(-1)。 Zn(3mol%):In(2mol%):LiNbO_3晶体的抗光损伤能力比LiNbO_3晶体高两个数量级。 LiNbO_3晶体波导衬底和Zn:In:LiNbO_3晶体波导衬底的光损伤阈值分别为5x 10〜3J / cm〜2和1 x 10〜6J / cm〜2。

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