Characterization of Si-on-insulator buried layers by FTIR and acatterometry

摘要

Non-destructive uniformity and defect control is an essential requirement for yield performanc eimprovement and cost reduction of Silicon-on-Insulator (SOI) materials. To maximize performance and minimize production costs, it is critical to maintain a tight control over the oxyfgen implant dose. This has proven to be particularly true for the most advanced low dose SIMOX processes. Advanced FTIR reflectance spectroscopy and scatterometry have been used to characterize the buried layers of SOI materials and to relate unambiguously the process dose variations and corresponding changes of IR reflectance spectra.