Investigation of dissolution process of implanted silicon dioxide

摘要

This work contains the results of the investigation of dissolution of SiO_2 after the implantation by Ar~+ and C~+ ions with the irradiation energy of several tens of keV. The measurements were carried out directly in the liquid in-situ with an atomic force microscope. The quantitative data about the distribution of the etching rate on the depth of the implanted layer were obtained. The change of the dissolution rate of SiO_2 after implantation is due to with the change of the internal structure of the material. The results of the quantum-mechanical calculations of the internal structure of SiO_2 before and after implantation are given.