The influence of classical and quantum-mechanical regions interaction on Ⅳ- characteristics of RTD, based on different materials

摘要

The effect of influence of different material parameters and structure design on Ⅳ- characteristic of RTD is considered in the paper. Special attention was paid to analysis of the interaction between classical and quantum-mechanical RTD regions. The combined numerical model of a resonant-tunneling diode, based on self-consistent solution of the Schroedinger and Poisson equations is presented. The interface charge was added to the Poisson equation and its approximation is also given. The simulation of Ⅳ-characteristics of RTD on In_(0.53)Ga_(0.47)As/AlAs and GaAs/AlAs was carried out by using the combined model and model modifications. As a confirmation of accuracy and adequacy of the proposed model there was achieved a good agreement between theoretical and experimental results. The effect of interface charge and sizes of the active regions on Ⅳ-characteristics of RTDs was also studied.