首页> 外文会议>Conference on Lithographic and Micromachining Techniques for Optical Component Fabrication, Jul 29-30, 2001, San Diego, USA >Surface cleaning mechanisms utilizing VUV radiation in oxygen containing gaseous environments
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Surface cleaning mechanisms utilizing VUV radiation in oxygen containing gaseous environments

机译:在含氧气体环境中利用VUV辐射进行表面清洁的机制

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This article presents results on surface cleaning with VUV radiation from dielectric barrier discharge-driven Xe_2~* excimer VUV light sources at 172 nm in oxygen-containing gases. The basic mechanism for the generation of excited rare gas and rare gas/halogen dimers in dielectric barrier discharges is described, which is utilized to generate powerful and efficient, incoherent excimer (V)UV light sources. After a brief discussion of the formation of atomic oxygen and ozone by irradiation of molecular oxygen with VUV light at 172 nm, the dominant chemical reaction scheme in the advanced oxidation of hydrocarbons on surfaces is outlined. Following to a comparison of the reaction rates of atomic oxygen and ozone with hydrocarbons, as well as a discussion of the mean free pathlength of atomic oxygen at or near atmospheric pressure, results on surface cleaning in air with VUV radiation at 172 nm will be presented.
机译:本文介绍了在含氧气体中以172 nm的电介质势垒放电驱动的Xe_2〜*准分子VUV光源通过VUV辐射进行表面清洁的结果。描述了在介电势垒放电中产生激发的稀有气体和稀有气体/卤素二聚体的基本机理,该机理用于产生强大而有效的非相干准分子(V)UV光源。在简要讨论了通过用172 nm的VUV光照射分子氧来形成原子氧和臭氧之后,概述了表面碳氢化合物高级氧化过程中的主要化学反应方案。在比较了原子氧和臭氧与碳氢化合物的反应速率之后,并讨论了在或接近大气压时原子氧的平均自由程长度,将介绍使用172 nm的VUV辐射在空气中进行表面清洁的结果。

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