Materials and structural design of a mid-infrared light emitting device

摘要

An optically pumped emitter for the mid-infrared region around 4 μm based on narrow gap semiconductors is demonstrated. The pumping takes place in the near-infrared around 1 μm and the radiation is converted by the narrow gap semiconductor into the MIR region as spontaneous emission. Ⅳ-Ⅳ lead chalcogenide-based compounds, especially PbSe and Ⅲ-Ⅴ InAsSb-based quantum well systems are applied for frequency conversion. These materials are grown by MBE and characterized mainly by photo luminescence spectroscopy. For a high radiation efficiency the outcoupling of the light is enhanced by surface structuring. Useful structures generating high photoluminescence intensity are characterized by IR imaging with an IR camera system being sensitive in the spectral region of interest.