High throughput scribing for the manufacture of LED components

摘要

Lasers are an important tool in the fabrication of photonic components and in particular their use in scribing for separating LED dies on sapphire substrates. This paper describes scribing and cutting of sapphire and GaN using UV lasers (355nm and 266nm harmonics of Nd:YVO_4 and 255nm harmonic of CVL). Scribing of sapphire at speeds of 30mm/s have been achieved and cutting of sapphire of up to 700 microns thickness has been demonstrated.