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Visible LED Alternatives for High Radiance Applications

机译:高辐射应用的可见LED替代品

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摘要

Laser diodes are used in high radiance applications, requiring spatially and angularly localized optical power, in order to minimize system size, cost, and power requirements. For applications requiring visible wavelengths (400nm to 700nm), AlInGaP laser diodes are utilized for wavelengths between 630nm and 650nm, and recently InGaN-based laser diodes spanning the violet to blue spectral range (400nm to 450nm) have become available, with longer wavelength devices being actively developed. It is not clear, however, when reliable laser diodes emitting in the green to yellow portion of the visible spectrum (>500nm) will be realized. In addition, single mode laser diodes required for high radiance applications typically exhibit speckle effects, are temperature sensitive, require non-linear drive electronics, and can be effected by optical feedback. High radiance LEDs with appropriate emitter dimensions can be used in place of laser diodes provided that moderate coherence and power levels are acceptable. This article examines the general dependencies of beam focusing, collimation, and coherence, on LED emitter size and radiance. Specific model examples are considered, using parameters consistent with typical laser diode collimating lenses. Edge emitting LEDs or EELEDs used for miniature scanned displays are described as high radiance LEDs suitable for other applications requiring collimation, partial coherence, or localized irradiance.
机译:激光二极管用于高辐射度应用,需要空间和角度局部光功率,以最大程度地减小系统尺寸,成本和功率要求。对于需要可见波长(400nm至700nm)的应用,AlInGaP激光二极管可用于630nm至650nm的波长,最近,基于InGaN的激光二极管可跨越紫到蓝光谱范围(400nm至450nm),并且具有更长的波长器件正在积极发展。但是,尚不清楚何时将实现在可见光谱的绿色至黄色部分(> 500nm)发射的可靠激光二极管。另外,高辐射应用所需的单模激光二极管通常表现出斑点效应,对温度敏感,需要非线性驱动电子器件,并可能受到光反馈的影响。只要适当的相干性和功率水平是可以接受的,可以使用具有适当发射体尺寸的高辐射度LED代替激光二极管。本文研究了光束聚焦,准直和相干性对LED发射器尺寸和辐射率的一般依赖性。考虑使用与典型激光二极管准直透镜一致的参数的特定模型示例。用于微型扫描显示器的边缘发射LED或EELED被描述为适用于需要准直,部分相干或局部辐照度的其他应用的高辐射LED。

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