首页> 外文会议>Conference on Light-Emitting Diodes: Research, Manufacturing, and Applications Ⅵ Jan 22-24, 2002 San Jose, USA >Bell Shaped Light Emitting Diode(BS-LED) with 45°Corner Reflector, Deep Side-Wall and Microlens
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Bell Shaped Light Emitting Diode(BS-LED) with 45°Corner Reflector, Deep Side-Wall and Microlens

机译:钟形发光二极管(BS-LED),带有45°角反射器,深侧壁和微透镜

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摘要

A new type Bell Shaped Light Emitting Diode(BS-LED) with a circular 45°comer reflector, deep side-wall and microlens is proposed and fabricated. Because the light of in-plane radiation in the active layer of Surface Emitting LED(SE-LED) can be extracted to emission surface by a circular 45°corner reflector, the output power saturation phenomena that occur due to the in-plane superluminescence can be considerably improved. So, the light output power and the linearity of light-current curve can be improved efficiently by the corner reflector. The deeply etched side-wall can dramatically improve the external quantum efficiency of LED by side-wall reflection and photon recycling mechanism. Microlens is formed on light emission surface to improve the beam pattern. The fabricated BS-LED shows the dramatically improved external quantum efficiency up to about 8 times than that of conventional LED. The output power improvement is simulated as device design parameters. The BS-LED is characterized using spectrum, near-field pattern and light-current measurement.
机译:提出并制造了一种新型的带有圆形45°角反射镜,深侧壁和微透镜的钟形发光二极管(BS-LED)。由于表面发光LED(SE-LED)的有源层中的平面内辐射光可以通过圆形45°角反射器提取到发射表面,因此可以产生由于平面内超发光而产生的输出功率饱和现象大大改善。因此,通过角反射器可以有效地提高光输出功率和光电流曲线的线性。通过侧壁反射和光子回收机制,深度蚀刻的侧壁可以显着提高LED的外部量子效率。微透镜形成在发光表面上以改善光束图案。制成的BS-LED的外部量子效率显着提高,是传统LED的8倍左右。模拟输出功率改善作为设备设计参数。 BS-LED的特征在于光谱,近场模式和光电流测量。

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