首页> 外文会议>Conference on Laser Micromachining for Optoelectronic Device Fabrication Oct 30, 2002 Brugge, Belgium >Fabrication of erbium doped planar waveguides by pulsed laser deposition and laser micromachining
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Fabrication of erbium doped planar waveguides by pulsed laser deposition and laser micromachining

机译:通过脉冲激光沉积和激光微加工制造掺do平面波导

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摘要

Laser radiation is used both for the deposition of dielectric Er:BaTiO_3 thin films and for material removal to generate wave guiding structures for photonic applications. Pulsed laser deposition with KrF excimer laser radiation (wavelength 248nm, pulsed duration 20 ns) is used to grow dense, transparent amorphous or crystalline erbium doped BaTiO_3 thin films. Visible emission due to up-conversion luminescence (wavelength 528 nm and 548 nm) under excitation with diode laser radiation at a wavelength of 975 nm is investigated as a function of the erbium concentration and structural film properties. The dielectric films are micro machined to form optical wave guiding structures using Nd:YAG laser radiation (wavelength 532 nm, pulsed duration 40 ps) and Ti:sapphire laser radiation (wavelength 810 nm, pulse duration 63 -150 fs) by scanning the focussed laser beam relatively to the sample.
机译:激光辐射既用于介电Er:BaTiO_3薄膜的沉积,又用于材料去除以生成光子应用的波导结构。使用KrF准分子激光辐射(波长248nm,脉冲持续时间20 ns)进行脉冲激光沉积,可生长致密,透明的非晶态或晶体掺do BaTiO_3薄膜。研究了在波长为975 nm的二极管激光辐射的激发下,由于上转换发光(波长528 nm和548 nm)而产生的可见发射与as浓度和结构膜性能的关系。使用Nd:YAG激光辐射(波长532 nm,脉冲持续时间40 ps)和Ti:蓝宝石激光辐射(波长810 nm,脉冲持续时间63 -150 fs)对介电膜进行微加工,以形成光波导结构。激光束相对于样品。

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