首页> 外文会议>Conference on Integrated Optics and Photonic Integrated Circuits; 20040427-20040429; Strasbourg; FR >High photorefractive resistance of Hafnium-doped single-domain and periodically-poled lithium niobate crystals
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High photorefractive resistance of Hafnium-doped single-domain and periodically-poled lithium niobate crystals

机译:掺Ha单畴和周期极化铌酸锂晶体的高光折变电阻

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摘要

Transient and steady-state measurements of photo-induced birefringence variations in single domain and periodically poled lithium niobate (LN) crystals containing different non-photorefractive impurities are presented. The birefringence change is induced by a 532-nm laser beam in the intensity range 0-500 W/cm~2, and is probed by 632.8- and 1523-nm beams. Data were taken at 25 and 50℃. We find that HfO_2 doping is very effective in reducing the photorefraction. This is interesting also because it is known that Hafnium-doped LN crystals can be periodically-poled during growth. The analysis of the rise and decay of the induced birefringence shows that doping considerably increases both the photoconductivity and the dark conductivity of the LN crystals.
机译:提出了瞬态和稳态测量的单域和周期性极化的铌酸锂(LN)晶体中包含不同非光折变杂质的光致双折射变化。双折射变化是由强度范围为0-500 W / cm〜2的532 nm激光束引起的,并由632.8 nm和1523 nm的光束探测到。数据是在25和50℃下获得的。我们发现,HfO_2掺杂在降低光折射方面非常有效。这也很有趣,因为众所周知growth掺杂的LN晶体可以在生长过程中周期性地极化。对诱导的双折射的上升和下降的分析表明,掺杂显着增加了LN晶体的光电导率和暗电导率。

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