首页> 外文会议>Conference on Integrated Optics and Photonic Integrated Circuits; 20040427-20040429; Strasbourg; FR >Refractive index change in photoluminescent patterns based on color centers generated in lithium fluoride by EUV radiation
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Refractive index change in photoluminescent patterns based on color centers generated in lithium fluoride by EUV radiation

机译:基于EUV辐射在氟化锂中产生的色心的光致发光图案的折射率变化

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Periodic luminescent patterns based on active color centers have been efficiently created in Lithium Fluoride (LiF) crystals and films by Extreme Ultra-Violet (EUV) light and soft x-rays from a laser-plasma source by masking the incoming radiation. Strong visible photoluminescence at room temperature has been measured from colored geometric microstructures, produced with high spatial resolution on large areas in short exposure times. Accurate spectrophotometric measurements allow estimating a significant increase in the real part of the refractive index, locally induced by the formation of high concentrations of stable primary and aggregate electronic defects at the surface of the LiF irradiated crystal, in a very thin layer, whose depth has been evaluated around 50 nm. On the basis of a semi-classical dipole-electromagnetic field interaction model, the contribution of different kinds of point defects to the overall refractive index change has been quantified. Promising opportunities in the fabrication of passive and active devices for integrated optics, such as gratings and distributed lasers, are offered by the use of this kind of radiation.
机译:通过遮盖入射的辐射,通过极紫外(EUV)光和来自激光等离子体源的软X射线,可以有效地在氟化锂(LiF)晶体和薄膜中创建基于活动色心的定期发光图案。已经从彩色几何微观结构测量了室温下的强可见光致发光,这些几何结构在较短的曝光时间内在大面积上具有较高的空间分辨率。精确的分光光度测量可以估算出折射率的实际部分的显着增加,这是由于在LiF辐照晶体表面形成的高浓度稳定初级和聚集电子缺陷的高度集中而在很薄的一层中引起的。在50 nm左右进行评估。在半经典偶极子-电磁场相互作用模型的基础上,已量化了各种点缺陷对总折射率变化的贡献。使用这种辐射为集成光学器件(例如光栅和分布式激光器)的无源和有源器件的制造提供了广阔的机遇。

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