High-Efficiency, High-Power Diode Laser Chips, Bars, and Stacks

摘要

Leveraging improvements to device structures and cooling technologies, ultra-high-power bars have been integrated into multi-bar stacks to obtain CW power densities in excess of 2.8 kW/cm~2 near 960 nm with spectral widths of <4nm FWHM. These characteristics promise to enable cost-effective solutions for a variety of applications that demand very high spatial and/or spectral brightness. Using updated device designs, mini-bar variants have been employed to derive CW powers of several tens of Watts near 940 nm on traditional single-emitter platforms. For example, >37 W CW have been obtained from 5-emitter devices on standard CuW CT heatsinks with AuSn solder. Near 808 nm, a PCE of 65% with a slope efficiency of 1.29 W/A has been demonstrated with a 20%-fill-factor, 2-mm-cavity-length bar.